High-k Dielectrics
Course Objectives
• Describe the state of the art in the growth and characterization
of high-k dielectrics
• Find out about the alternate high-k dielectric materials,
their properties, and advantages.
• Understand the relationship between materials properties,
deposition techniques and process integration issues
• Learn about both amorphous/poly and epitaxial high-k dielectrics
on different semiconductor substrates (group IV, III-V)
Course Description
A brief introduction of the trends in scaling of VLSI and ULSI
circuits (logic and memories) and the impact on gate, tunnel,
and interpoly oxides will be given in order to relate the course
contents to past and future trends in active dielectrics as
foreseen by the Semiconductor Industry Association (SIA) technology
roadmap. The main part of the course will be devoted to thin
film high-k dielectrics used in MOSFETs, however additional
applications in non-volatile memories, spintronic devices, as
well as novel concepts will be discussed. Among the different
growth techniques the course will focus on atomic layer deposition
(ALD) and molecular beam epitaxy (MBE). The ALD process will
be addressed in details and information on process parameters,
precursors, and equipment will be given. Structural, morphological
and physical characterization will be discussed.
Who Should Attend?
This course is intended for scientist, engineers, technicians,
and managers who will be involved with or impacted by the transition
to high-k dielectric materials in advanced IC fabrication. The
course will provide the basics for understanding the materials
and process integration issues for high-k materials as well
the trends in the technology.
Instructors:
M. Fanciulli, MDM-INFM Laboratory
G. Scarel, MDM-INFM Laboratory
Course Materials: Course Notes
Questions?
- mfanciulli@mdmlab.mi.infm.it
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